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MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM400DG-66S
High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE
RM400DG-66S
IF ................................................................... 400A VRRM ...................................................... 3300V High Insulated Type 2-element in a Pack AlSiC Baseplate
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130 0.5 57 0.25 57 0.25 4-M8 NUTS 40.4 0.5
17 0.1
22 0.3
4
2
4
(K)
2
(K)
124 0.25
3
>PET+PBT<
1
140 0.5
44 0.3
3
(A)
1
(A)
6-7 MOUNTING HOLES
34.4 0.5
CIRCUIT DIAGRAM
61.2 0.5 16.5 0.3
Screwing depth min. 16.5
High Voltage Diode Module
5 0.15
48 +1.0 0
May 2009 1
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM400DG-66S
High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS
Symbol VRRM VRSM VR(DC) IF IFSM I2t Viso Ve Tj Top Tstg Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage DC forward current Surge forward current Current-squared, time integration Isolation voltage Partial discharge extinction voltage Junction temperature Operating temperature Storage temperature Conditions Tj = 25 C Tj = 25 C Tj = 25 C TC = 25 C Tj = 25 C start, tw = 8.3 ms Half sign wave Tj = 25 C start, tw = 8.3 ms Half sign wave Charged part to the baseplate RMS sinusoidal, 60Hz 1min. RMS sinusoidal, 60Hz, QPD 10PC -- -- -- Ratings 3300 3300 2200 400 3200 42.7 10200 5100 -40 ~ +150 -40 ~ +125 -40 ~ +125 Unit V V V A A kA2s V V C C C
ELECTRICAL CHARACTERISTICS
Symbol IRRM VFM trr Irr Qrr Erec Item Repetitive reverse current Forward voltage (Note 1) VRM = VRRM IF = 400 A Conditions Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C Min -- -- -- -- -- -- -- -- Limits Typ -- 1 2.80 2.70 1.0 530 270 0.3 Max 2 10 -- -- -- -- -- -- Unit mA V s A C J/P
Reverse recovery time VR = 1650 V, IF = 400 A Reverse recovery current di/dt = -1350 A/s Reverse recovery charge Reverse recovery energy (Note 2) Ls=100nH, Tj = 125 C
Note 1. It doesn't include the voltage drop by internal lead resistance. 2. Erec is the integral of 0.1VR x 0.1Irr x dt.
High Voltage Diode Module
May 2009 2
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM400DG-66S
High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol Rth(j-c) Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to case (per 1/2 module) Case to Fin, grease = 1W/m*K D(c-f)=100m, (per 1/2 module) Min -- -- Limits Typ -- 48.0 Max 54.0 -- Unit K/kW K/kW
MECHANICAL CHARACTERISTICS
Symbol Mt Ms m CTI Da Ds LP CE RCC'+EE' Item Mounting torque Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance Conditions M8: Main terminals screw M6: Mounting screw -- -- -- -- -- Tc = 25 C Min 7.0 3.0 -- 600 26 56 -- -- Limits Typ -- -- 1.0 -- -- -- 44 0.27 Max 15.0 6.0 -- -- -- -- -- -- Unit N*m N*m kg -- mm mm nH m
PERFORMANCE CURVES
FORWARD CHARACTERISTICS (TYPICAL) 800 0.5 REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) VR = 1650V, di/dt = 1350A/s Tj = 125C, LS = 100nH 0.4
FORWARD CURRENT IF (A)
600
REVERSE RECOVERY ENERGY Erec (J/p)
Tj = 25C Tj = 125C 0 1 2 3 4 5 6
0.3
400
0.2
200
0.1
0
0
0
200
400
600
800
1000
FORWARD VOLTAGE VF (V)
FORWARD CURRENT IF (A)
High Voltage Diode Module
May 2009 3
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM400DG-66S
High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE
REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102
7 5
REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 104 1000 VR 2200V, di/dt 1800A/s Tj = 125C
REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CURRENT Irr (A)
7 5 3 2
VR = 1650V, di/dt = 1350A/s Tj = 125C, LS = 100nH
REVERSE RECOVERY TIME trr (s)
3 2
800
101
7 5 3 2
103 Irr
7 5 3 2
600
400
100
7 5 3 2
102 trr
7 5 3 2 7 102 7 103
200
10-1 1 10
101
2
3 45
2
3 45
0
0
1000
2000
3000
4000
FORWARD CURRENT IF (A)
REVERSE VOLTAGE VR (V)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 1.2
NORMALIZED TRANSIENT THERMAL IMPEDANCE
Rth(j-c) = 18K/kW 1.0
0.8
Z th( j -c ) ( t ) =
Ri [K/kW]
Ri 1-exp i=1
1 0.0059 0.0002 2 0.0978 0.0074
n
0.6
i [sec]
0.4
0.2
0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s)
High Voltage Diode Module
4

-
t
ti
3 0.6571 0.0732
4 0.2392 0.4488
May 2009

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